Physics of future ultra high speed transistors - Part 1: HBT - E. Kasper, J.
Eberhardt, Univ. Stuttgart, Germany 151 Physics of future ultra high speed transistors - Part 2: New concepts - E. Kasper, G. Reitemann, Univ. Stuttgart,
Germany 155 RF ...
A. Gruhle [ 1994 ) , “ SiGe HBTS , ” in J.-F. Luy and P. Russer ( ed . ) ... “ Physics of Future Ultra High Speed Transistors – Part 1 : HBT , ” European ...
Author: W. Ross Stone
Publisher: John Wiley & Sons
A triennial summation of the state of the art in radio science This book is the fourth in the modern series of triennial reviews prepared by the International Union of Radio Science to further communication and understanding of the status and future of radio science, both for those working in the field, and for those who want to know what is of current importance in this area. The International Union of Radio Science, URSI (Union Radio-Scientifique Internationale), has divided the subject of "Radio Science" according to the ten topics of the Scientific Commissions that make up URSI. This volume consists of thirty-eight original, peer-reviewed papers. Each paper provides a critical, in-depth review of–and, in many cases, tutorial on–advances and research that have been of significant importance within the area of interest of the Commissions during the past three to four years. Among the topics covered are: Electromagnetic metrology Fields and waves Signals and systems Electronics and photonics Electromagnetic noise and interference Wave propagation and remote sensing Ionospheric radio and propagation Waves in plasmas Radio astronomy Electromagnetics in biology and medicine With an included CD-ROM of the full book text, allowing the user to do full-text searching of all the papers, the Review of Radio Science: 1999—2002 is a resource of vital importance to anyone working in, or with an interest in, radio science.
... 1 1 1 MGF - TuC3 , Room 13b , Silicon - Based High Frequency Engineering Physics of future ultra high speed transistors - Part 1 : HBT - E. Kasper , J.
Eberhardt , Univ . Stuttgart , Germany . Physics of future ultra high speed transistors - Part ...
Physical limitations of InP/InGaAs heterojunctionbipolar transistors. ... Comparative technology assessment of future InP HBT ultrahigh-speed digital ...
Author: Tobias Nardmann
Publisher: BoD – Books on Demand
Category: Technology & Engineering
The trend in modern electronics towards ever higher frequencies of operation and complexity as well as power efficiency requires a whole palette of different technologies to be available to circuit designers for various applications. While MOSFETs dominate the digital world, they have apparently reached their top analogue performance around the 65nm node. Emerging technologies such as CNTFETs offer excellent properties such as very high linearity and speed in theory, but have yet to deliver on those promises in practice. Heterojunction bipolar transistors (HBTs), on the other hand, offer a number of key advantages over competing technologies: A very high transconductance and therefore a relatively low impact of a load impedance on the transistor operation, a high transit frequency and maximum frequency of oscillation at a comparatively relaxed feature size and favorable noise characteristics. Like all semiconductor devices, HBTs can be fabricated in diferent semiconductor materials. The most common are SiGe HBTs, which even today reach values above (ft; fmax) = (300; 500) GHz and are projected to eventually reach the THz range. However, HBTs fabricated in III-V materials offer a versatile alternative. Depending on the materials that are used, III-V HBTs can be the fastest available bipolar transistors (competing only with HEMTs, also fabricated in III-V materials, for the title of fastest available transistors overall), offer very high breakdown voltages and therefore excellent power-handling capability, show good linearity or low noise figures at high frequencies. Typical applications for III-V HBTs include handset PAs, high-effciency and high-speed amplifiers as well as high-speed oscillators . Overall, III-V-based HBTs and especially InP HBTs are excellent candidates for future high-speed communication circuits. The goal of this work is to include important effects occurring in III-V materials in a compact model for circuit design in a physical, yet intuitive way in order to aid deployment of III-V HBTs in prototypes and products. Additionally, the parameter extraction procedure for the compact model is described and analyzed in detail so an accurate, physics-based parameter set can be obtained. Finally, the agreement of the model with measurements is demonstrated for three different III-V HBT processes.
Y. Ota, T. Hirose, M. Yanagihara, et al., "AlGaAs/GaAs HBT with Galn/As cap layer ... "Recent advances in ultrahigh-speed HEMT LSI technology," IEEE Trans.
Author: Juras Pozela
Publisher: Springer Science & Business Media
This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.
The conference was sponsored by the Japan Society of Applied Physics , and
technical - cosponsored by IEEE Electron ... and engineers active in the forefront
of development of solid state devices and materials for the present and future . ...
Modeling 3 ) Silicon Process Materials Technologies 4 ) High - Speed / High -
Frequency Devices and Their Integrated ... resonance FET field effect transistor HBT heterostructure bipolar transistor HEMT high electron mobility transistor HET
Part 1. Resonant Tunneling Diode / HBT D - Flip Flop ICs Using Current Mode
Logic - Type Monostable - Bistable ... -type resonant tunneling diode ( RTD ) /
heterojunction bipolar transistor ( HBT ) monostablebistable transition logic
element ... capacity in optical communication systems has led to the development
of electrical digital circuits for ultrafast operation . ... to be one of the most
promising candidates for future high - speed digital circuits , which satisfy the
requirements of high ...
The noise voltage follows a 1 / / dependence and is approximately 1 « V / Hz at 1
Hz for a ring JFET that is 1250 jim in ... looking for low 1 / f noise and good
dynamic performance at 4 K. We want also fast speed with low white noise and
high radiation ... High electric field effect in very small pseudomorphic High
Electron Mobility Transistors ( HEMT ) Alo.22 G29.78 As / Ino . ... We conclude
that SiGe HBT technology offers significant leverage for future cryogenic digital ,
along and mixed ...
1. Introduction With the challenge from current high-speed and ... high-performance SiGe-based heterojunction bipolar transistors (HBTs) [1,2], ...
Author: E.H.C. Parker
This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.
The 1 - V characteristics of an InGaAs HBT with an abrupt , single heterojunction
structure are shown in Fig . 37a . The high offset ... The ultrahigh speed and
scalability of these devices makes them attractive candidates for future digital and
microwave circuits . 1.5 BIPOLAR TRANSISTOR MODELING 1.5.1 Physics -
Based Modeling To simulate the characteristics of bipolar transistors , physics -
An in-depth, up-to-date presentation of the physics and operational principles of all modern semiconductor devices The companion volume to Dr. Sze's classic Physics of Semiconductor Devices, Modern Semiconductor Device Physics covers all the significant advances in the field over the past decade. To provide the most authoritative, state-of-the-art information on this rapidly developing technology, Dr. Sze has gathered the contributions of world-renowned experts in each area. Principal topics include bipolar transistors, compound-semiconductor field-effect-transistors, MOSFET and related devices, power devices, quantum-effect and hot-electron devices, active microwave diodes, high-speed photonic devices, and solar cells. Supported by hundreds of illustrations and references and a problem set at the end of each chapter, Modern Semiconductor Device Physics is the essential text/reference for electrical engineers, physicists, material scientists, and graduate students actively working in microelectronics and related fields.
A new field‐effect transistor with selectively doped GaAs/n‐49. ... of Journal the high of electron Applied mobility Physics transistor 19 (5): L225–227.
Author: Stuart Irvine
Publisher: John Wiley & Sons
Category: Technology & Engineering
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
For future importance of complementary HFET devices the application of MOS
gates and manufacturing issues will be crucial . ... transport and exploitation of
transit time effects as essential ingredients of future ultra high - speed silicon
devices . X. REFERENCES [ 1 ] S.Y. Chang , S. M. Sze , ULSI Devices , J. Wiley ,
New York , 1999 [ 2 ] W. Shockley , US Patent ... [ 4 ] T. Sugeta and T. Tshibashi ,
Hetero - Bipolar Transistor and Its LSI Application , in Semiconductors and
Semimetals , Vol ...
Author: Vikram Kumar
Publisher: SPIE-International Society for Optical Engineering
Author: IEEE Electron Devices SocietyPublish On: 1991
TUE.1 High Speed InGaAs HBT Devices and Circuits B. Jalali , R.N. Nottenburg ,
M. Banu , R.K. Montgomery , A.F.J. Levi ... This together with small bandgap of
InGaAs ( 0.76V ) allows for realization of ultra - high speed integrated circuits with
low power consumption . Understanding of device physics is crucial for the
design and optimization of the transistor . ... where ultra - high speed and low
power electronic components are needed is the future lightwave communication
For these cases , where the SiGe - to - Si Bsige / Bsı ratio is 2.57 and 3.53 , the
SiGe HBT transistors provide both a higher ... Ge ( graded ) / KT ) e ( 1142 ) si KT
8 , Ge heterojunction high - current phenomenon in the short - pulse - high
current regime . ... -AEg , Ge ( graded ) / KT 1- exp 1.2sige / 1123 ; } From the Moll
- Ross - Kroemer current relationships , the SiGe ... B. Meyerson , " Si / SiGe
Epitaxial - Base Transistors - Part I : Materials , Physics , and Circuits , ” IEEE
Trans . on Elec .
3As HBT Inp / InGaAs GaAs / GaAlAs Rc ( 2 ) Rb ( 2 ) RL ( 2 ) Cc ( FF ) Ce ( FF ) te
( ps ) Tb ( ps ) Tc ( ps ) tc ( ps ) Tec ... 50 130 max The calculated speed
performance shows that the InP / InGaAs HBT is moderately faster than the transistor in the ... compositions uniform over large areas , will result in the
fabrication of very high speed InP / InGaAs HBT's in the future . ... driver due to its
high current capability or a photodetector with high optical gain and speed . as
References 2 . on a 1 .
When the Pt - Ti - Pt - Au multimetal system was used as the base electrode , fmar
was confirmed to be up to 105 GHz . ... he has been engaged in the research and
development of GaAs - based HBT fabrication technologies and its high speed ...
Hiroshi Tezuka received the B.S. and M.S. degrees in applied physics from Tokyo
University , Tokyo , Japan , in 1989 ... Monolithic ultra - broadband
transimpedance amplifiers using AlGaAs / GaAs heterojunction bipolar transistors , ” IEEE ...
... 18 23501 A98-45379 The K - 1 commercial reusable aerospace vehicle ( LAF
Paper 98 - V101 ) 15 03479 A98-45427 VEGA ... 98-113011 12 03464 A98-
45625 High performance ground station for the PROBA mission CAA Paper 98-
113031 17 ... Some implications of refinements to the physics and chemistry of
lower - mass stars 90 p1225 A98-21731 Very low ... noise performance at high
drain bias 33 p3227 A98-42764 Nonlinear modeling and design of bipolar transistors ultra ...