Physics and Chemistry of Interfaces

Author: Hans-Jürgen Butt,Karlheinz Graf,Michael Kappl

Publisher: John Wiley & Sons

ISBN: 3527412166

Category: Science

Page: 495

View: 9750

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The third edition of this excellent textbook for advanced students in material science, chemistry, physics, biology, engineering, or for researchers needing background knowledge in surface and interface science. The general yet comprehensive introduction to this field focuses on the essential concepts rather than specific details, on intuitive understanding rather than learning facts. The text reflects the many facets of this discipline by linking physical fundamentals, especially those taken from thermodynamics, with application-specific topics. Similarly, the theory behind important concepts is backed by clearly explained scientific-engineering aspects, as well as by a wide range of high-end applications from microelectronics and biotechnology. Manifold high-end applications from surface technology, biotechnology, and microelectronics are used to illustrate the basic concepts. New to this edition are such hot topics as second harmonic generation spectroscopy, surface diffusion mechanisms and measurement of surface diffusion, optical spectroscopy of surfaces, atomic layer deposition, superlubricity, bioadhesion, and spin coating. At the same time, the discussions of liquid surfaces, the Marangoni effect, electric double layer, measurement of surface forces, wetting, adsorption, and experimental techniques have been updated, while the number and variety of exercises are increased, and the references updated.
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Research Methodology on Interfaces of Physics and Chemistry in Micro and Nanoscale Materials

Author: Nekane Guarrotxena

Publisher: CRC Press

ISBN: 1771880112

Category: Science

Page: 306

View: 8394

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This book covers a selection of recent research studies and new developments in physics and chemistry in micro and nanoscale materials. It brings together research contributions from eminent experts in the field from both academic and industry, providing the latest developments in advanced materials chemical domains.
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Physics and Chemistry of III-V Compound Semiconductor Interfaces

Author: Carl Wilmsen

Publisher: Springer Science & Business Media

ISBN: 1468448358

Category: Science

Page: 465

View: 5485

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The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

Author: B.E. Deal,C.R. Helms

Publisher: Springer Science & Business Media

ISBN: 1489907742

Category: Science

Page: 556

View: 1440

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The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2

Author: B.E. Deal,C.R. Helms

Publisher: Springer Science & Business Media

ISBN: 1489915885

Category: Science

Page: 503

View: 702

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The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
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Fundamentals of Interface and Colloid Science

Soft Colloids

Author: J. Lyklema

Publisher: Elsevier

ISBN: 9780080457406

Category: Science

Page: 844

View: 5103

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Volume V is the counterpart of Volume IV and treats hydrophilic colloids and related items. Contains edited contributions on steric stabilization, depletion, polyelectrolytes, proteins at interfaces, association colloids, microemulsions, thin films, foams and emulsions. J. Lyklema is coauthor of two chapters and general editor. Other authors include: G.J. Fleer, F.A.M. Leermakers, M.A. Cohen Stuart, W. Norde, J.A.G. Buijs, J.C. Eriksson, T.Sottmann, R. Strey, D. Platikanov, D. Ekserova, V.Bergeron and P.Walstra. * This volume completes the prestigious series Fundamentals of Interface and Colloid Science * Together with Volume IV this book provides a comprehensive introduction to colloid science. * Explains and elaborates phenomena starting from basic principles and progresses to more advanced topics
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