Field effect Self mixing Terahertz Detectors

Field effect Self mixing Terahertz Detectors

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis.

Author: Jiandong Sun

Publisher: Springer

ISBN: 9783662486818

Category: Technology & Engineering

Page: 126

View: 974

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.
Categories: Technology & Engineering

Infrared and Terahertz Detectors Third Edition

Infrared and Terahertz Detectors  Third Edition

147. J. Sun, Field-effect Self-mixing Terahertz Detectors, Springer-Verlag, Berlin,
2016. 148. V. Ryzhii, A. Satou, I. Khmyrova, M. Ryzhii, T. Otsuji, V. Mitin, and M.S.
Shur, “Plasma effects in lateral Schottky junction tunneling transit-time terahertz ...

Author: Antoni Rogalski

Publisher: CRC Press

ISBN: 9781351984768

Category: Technology & Engineering

Page: 1044

View: 158

This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It contains a complete overhaul of the contents including several new chapters and a new section on terahertz detectors and systems. It includes a new tutorial introduction to technical aspects that are fundamental for basic understanding. The other dedicated sections focus on thermal detectors, photon detectors, and focal plane arrays.
Categories: Technology & Engineering

Emerging Trends in Terahertz Solid State Physics and Devices

Emerging Trends in Terahertz Solid State Physics and Devices

Sources, Detectors, Advanced Materials, and Light-matter Interactions Arindam
Biswas, Amit Banerjee, Aritra Acharyya, ... roomtemperature, self-mixing terahertz
detector realized using floating antennas on a GaN-based field-effect transistor.

Author: Arindam Biswas

Publisher: Springer Nature

ISBN: 9789811532351

Category: Science

Page: 203

View: 489

This book highlights recent advances and applications in terahertz (THz) technology, addressing advanced topics such as THz biomedical imaging, pattern recognition and tomographic reconstruction for THz biomedical imaging by machine learning and artificial intelligence, THz imaging radars for autonomous vehicle applications, and THz imaging systems for security and surveillance. It also discusses theoretical, experimental, established and validated empirical work on these topics.
Categories: Science

Handbook of Terahertz Technologies

Handbook of Terahertz Technologies

A. Lisauskas, U. Pfeiffer, E. Öjefors, P. Haring Bolivar, D. Glaab, and H. G. Roskos
, Rational design of highresponsivity detectors of terahertz radiation based on
distributed self-mixing in silicon field-effect transistors, J. Appl. Phys. 105,114511
 ...

Author: Ho-Jin Song

Publisher: CRC Press

ISBN: 9789814613095

Category: Science

Page: 612

View: 112

Terahertz waves, which lie in the frequency range of 0.1–10 THz, have long been investigated in a few limited fields, such as astronomy, because of a lack of devices for their generation and detection. Several technical breakthroughs made over the last couple of decades now allow us to radiate and detect terahertz waves more easily, which has triggered the search for new uses of terahertz waves in many fields, such as bioscience, security, and information and communications technology. The book covers some of the technical breakthroughs in terms of device technologies. It discusses not only the theoretical details and typical features of the technology described, but also some issues and challenges related to it. In addition, it is shown what can actually be done with the terahertz-wave technologies by introducing several successful demonstrations, such as wireless communications, industrial uses, remote sensing, chemical analysis, and 2D/3D imaging.
Categories: Science

Fundamental And Applied Problems Of Terahertz Devices And Technologies Selected Papers From The Russia japan usa europe Symposium Rjuse Teratech 2016

Fundamental And Applied Problems Of Terahertz Devices And Technologies  Selected Papers From The Russia japan usa europe Symposium  Rjuse Teratech 2016

A. Lisauskas, U. Pfeiffer, E. Öjefors, P. Haring Bolívar, D. Glaab, and H. G. Roskos
, “Rational design of high-responsivity detectors of terahertz radiation based on
distributed selfmixing in silicon field-effect transistors”, J. Appl. Phys. 105 (2009) ...

Author: Ryzhii Maxim V

Publisher: World Scientific

ISBN: 9789813223295

Category: Technology & Engineering

Page: 140

View: 316

Terahertz (THz) electromagnetic waves, phenomena in the THz range and related technological issues have been explosively investigated during the recent two decades. However, its potential as a disruptive technology to commercial applications has yet to make any impression. The Russia-Japan-USA-Europe Symposium on Fundamental and Applied Problems of Terahertz Devices and Technologies (RJUSE-TeraTech 2016), held at Katahira Campus of Tohoku University, Sendai, Japan on October 31 – November 4, 2016, aims to bring together researchers from Russia, Japan, USA and Europe, who are working on the broad range of related problems in the terahertz devices, technologies and applications, to discuss on state-of-the-art results and future directions and collaborations in the development of THz. This is the fifth in the series of preceding successful symposiums in Terahertz Devices and Technologies. It contains 14 selected extended papers presented at the RJUSE-TeraTech 2016 symposium, addressing the variety of topics, in particular, THz detectors based on double heterojunction bipolar transistors (DHBT) and field effect transistors (FET) utilizing resonant plasma effects, quantum cascade (QCL) and HgCdTe quantum-well heterostructures, and graphene-based THz devices.
Categories: Technology & Engineering

Optics Letters

Optics Letters

Measurement of nanoparticle sizes by conventional optical microscopy with
standing evanescent field illumination , 2794 Quasi ... radiation for high - speed
terahertz imaging and spectroscopy , 1593 Serrodyne optical frequency shifting
for heterodyne self - mixing in a ... materials Reflective terahertz imaging of
porcine skin burns , 1258 Photodetectors ( Detectors ) Junction field - effect -
transistor ...

Author:

Publisher:

ISBN: CHI:82280891

Category: Optics

Page:

View: 559

Categories: Optics

Proceedings IEEE Cornell Conference on High Performance Devices

Proceedings     IEEE Cornell Conference on High Performance Devices

These results can be explained on the basis of the new theoretical model in
which the plasma self - excitation can appear under condition of the high gate
current ... 71 , 2465 , 1993 [ 3 ] M . I . Dyakonov and M . S . Shur , " Detection ,
Mixing , and Frequency Multiplication of Terahertz ... Kachorovskii , “ Nonlinear
Theory of the Current Instability in a Ballistic Field - Effect Transistor ” , Physical
Review B , Vol ...

Author:

Publisher:

ISBN: UOM:39015048321882

Category: Integrated circuits

Page:

View: 235

Categories: Integrated circuits

Technologies for Optical Countermeasures II Femtosecond Phenomena II And Passive Millimetre wave and Terahertz Imaging II

Technologies for Optical Countermeasures II   Femtosecond Phenomena II   And  Passive Millimetre wave and Terahertz Imaging II

Self - guiding high intensity plasma filament must take account of the plasma
effects . ... High intensity inside the filaments generates at distance new
frequencies by self - phase modulation and by four photon mixing . The
wavelength range extends up the 3-5 um band ( 4 ) . In this paragraph , we will
evaluate the overlap between the photo - induced plasma and the field of view of
a detector . For that ...

Author: David H. Titterton

Publisher: Society of Photo Optical

ISBN: UOM:39015062467025

Category: Technology & Engineering

Page: 464

View: 676

Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.
Categories: Technology & Engineering

JJAP

JJAP

Low - Energy Proton Irradiation Effects on GaAs / Si Solar Cell L 1302
Nallathambi CHANDRASEKARAN , Tetsuo SOGA ... Self - Assembled Monolayer
Yong Suk YANG and Taehyoung ZYUNG Flexible All - Organic Field - Effect
Transistors ... Si - Chen LEE Dot Infrared Photodetectors Room - Temperature
Observation of Negative Differential Conductance L 210 ... Lian DUAN , Gangtie
LEI and Yong Derivatives and Rubrene QIU Plasma Oscillations in Terahertz
Photomixing High ...

Author:

Publisher:

ISBN: UVA:X006163087

Category: Engineering

Page:

View: 515

Categories: Engineering

IEICE Transactions on Electronics

IEICE Transactions on Electronics

[9] M. Dyakonov and M. Shur, "Shallow water analogy for a ballistic field effect
transistor: New mechanism of plasma wave ... [11] M. Dyakonov and M. Shur, "
Detection, mixing, and frequency multiplication of terahertz radiation by two-
dimensional electronic fluid," IEEE Trans. ... [26] M. Tokumitsu, M. Hirano, T.
Otsuji, S. Yamaguchi, and K. Yamasaki, "A 0.1-pm self-aligned-gate GaAs
MESFET with ...

Author:

Publisher:

ISBN: UCSD:31822033919044

Category: Electronics

Page:

View: 515

Categories: Electronics

International Aerospace Abstracts

International Aerospace Abstracts

... symmetry in jet engine bladed disks ( c07 A99-20022 ) MITOCHONDRIA Effect
of tail suspension on mitochondrial Ca ( 2+ ) ... A99-20905 ) MIXING CIRCUITS
Low - noise and wideband hot - electron superconductive mixer for THz
frequencies ... A99-20665 ) Submillimeter wave detection and mixing
experiments using high temperature Josephson junctions ( c33 ... weak parallel
magnetic field 1c75 A99-21505 ) MIXING RATIOS Verification of German
methane emission inventories ...

Author:

Publisher:

ISBN: STANFORD:36105021810432

Category: Aeronautics

Page:

View: 162

Categories: Aeronautics

Japanese Journal of Applied Physics

Japanese Journal of Applied Physics

The Effect of Isoelectronic In - Doping on the Structural and Optical 2385 Shigeo
YAMAGUCHI , Michihiko KARIYA ... GaN Superlattices 2428 Kazuhide
KUMAKURA , Toshiki MAKIMOTO and Due to Piezoelectric Field Naoki
KOBAYASHI nt ... Effects on the Electronic 3907 A. R. GOÑI , H. BORN , R. HEITZ
, A. HOFFMANN , Structure of Self - organized InGaAs ... and Victor RYZHII
Injection Heterostructure Transistors Observation of Terahertz Photon - Assisted
Tunneling in Triple- 4899 ...

Author:

Publisher:

ISBN: UCSC:32106015680934

Category: Physics

Page:

View: 521

Categories: Physics

Physics Briefs

Physics Briefs

Author:

Publisher:

ISBN: UOM:39015027828634

Category: Physics

Page:

View: 633

Categories: Physics

High TC Update

High TC Update

Alain J . Kreisler and Alain Gaugue , “ Recent Progress in HTSC Bolometric
Detectors at Terahertz Frequencies . ... T . Ruf , M . Cardona , and T . Wolf , “
Anomalous Phonon Self - Energy Effects in SmBa2Cu3Ovi A Raman Study . ...
Indications of Pair Electron Effect Above Field Induced Superconductor - Insulator
Transition in Amorphous Ultra Thin W Films ... Jr . , R . M . Weikle , R . A . Rao ,
and C . B . Eom , “ Nonlinear THz Mixing in YBa2Cu307 Thin Film Hot Electron
Bolometers .

Author:

Publisher:

ISBN: STANFORD:36105020914193

Category: High technology

Page:

View: 123

Categories: High technology

Proceedings

Proceedings

These results can be explained on the basis of the new theoretical model in
which the plasma self - excitation can appear under condition of the high gate
current . ... 71 , 2465 , 1993 [ 3 ] M. I. Dyakonov and M. S. Shur , “ Detection ,
Mixing , and Frequency Multiplication of Terahertz ... Kachorovskii , “ Nonlinear
Theory of the Current Instability in a Ballistic Field - Effect Transistor ” , Physical
Review B , Vol .

Author: Leda Lunardi

Publisher:

ISBN: CORNELL:31924095785436

Category: Technology & Engineering

Page: 508

View: 731

Categories: Technology & Engineering

JJAP Letters

JJAP Letters

Low - Energy Proton Irradiation Effects on GaAs / Si Solar Cell L 1302
Nallathambi CHANDRASEKARAN , Tetsuo SOGA ... Self - Assembled Monolayer
Yong Suk YANG and Taehyoung ZYUNG Flexible All - Organic Field - Effect
Transistors ... Si - Chen LEE Dot Infrared Photodetectors Room - Temperature
Observation of Negative Differential Conductance L 210 ... Lian DUAN , Gangtie
LEI and Yong Derivatives and Rubrene QIU Plasma Oscillations in Terahertz
Photomixing High ...

Author:

Publisher:

ISBN: UOM:39015058774285

Category: Physics

Page:

View: 798

Categories: Physics

Conference Digest

Conference Digest

15 QTUH10 Direct current generation due to wave mixing in semiconductor
superlattices Kirill N . Alekseev Kirensky Institute of Physics ... with impurities and
phonons ) and generation of a self - consistent electric field along the SSL axis ,
which is a strongly nonlinear effect . ... application in the constraction of SSL -
based THz - field detectors , as well as for measurements of scattering constants
in SSLs .

Author:

Publisher:

ISBN: UOM:39015048219029

Category: Quantum electronics

Page:

View: 617

Categories: Quantum electronics

Index to IEEE Publications

Index to IEEE Publications

Author: Institute of Electrical and Electronics Engineers

Publisher:

ISBN: STANFORD:36105021103119

Category: Electrical engineering

Page:

View: 410

Categories: Electrical engineering